BUK9610-55A,118 datasheet

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О ДАТАШИТЕ

• Маркировка
  BUK9610-55A,118
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK9610-55A,118 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 55V Drain-source Breakdown Voltage: 55 V Fall Time: 139 ns Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 68nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950532 Input Capacitance (ciss) @ Vds: 4307pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 200W Power Dissipation: 200000 mW Rds On (max) @ Id, Vgs: 9 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V Rise Time: 155 ns Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Other Names: 934056852118, BUK9610-55A /T3
• Количество страниц
  13 шт.
• Форматы файла
  HTML, PDF

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